rohs smd silicon phototransistor OP520, op521 optek technology inc.? 1645 wallace drive, carrollton, texas 75006 phone: (800) 341-4747 fax: (972) 323? 2396 sensors@optekinc.com www.optekinc.com issue 1.1 02/07 page 1 of 3 optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. ? non-contact position sensing ? datum detection ? machine automation ? optical encoders OP520, op521 ? high photo sensitivity ? fast response time ? 1206 package size ? opaque or water clear flat lens description: the OP520 and op521 are npn silicon phototransistor moun ted in miniature smt packages. both the OP520 and op521 have a flat lens however, the OP520 lens is opaque to shield the device from stray light. these sen- sors are packaged in 1206 size chip carriers that are compatible with most automated mounting equipment. the OP520 and op521 are mechanically and spectrally matched to the op250 series infrared leds. applications recommended solder pads [1.600.10] .063.0039 [1.500.10] .059.0039 [4.600.10] .181.0039 [1.600.10] .063.0039 pin function 1 collector 2 emitter
smd silicon phototransistor OP520, op521 absolute maximum ratings t a = 25 o c unless otherwise noted storage temperature range -40 c to +85 c operating temperature range -25 c to +85 c lead soldering temperature 260 c (1) collector-emitter voltage 30 v collector current 20 ma power dissipation 75 mw (2) emitter-collector voltage 5 v notes: 1. solder time less than 5 seconds at temperature extreme. 2. de-rate linearly at 2.17 mw/ c above 25 c. 3. light source is an unfiltered gaas led with a peak emission wavelength of 935nm and a radiometric intensity level which vari es less than 10% over the entire lens surface of the phototransistor being tested. 4. to calculate typical collector dark current in a, use the formula i ceo = 10 (0.04ta-3.4) where ta is the ambient temperature in c. relative collector current relative on-state collector current vs. irradiance 0 1.0 2.0 3.0 4.0 ee?irradiance (mw/cm 2 ) relative collector current 80% 100% 120% 140% 160% relative on-state collector current vs. temperature -25 0 25 50 75 100 temperature?( c) -40 c 80 c electrical characteristics (t a = 25 c unless otherwise noted) symbol parameter typ max units conditions i c(on) on-state collector current ma v ce = 5.0v, e e = 5.0mw/cm 2 (3) v ce(sat) collector-emitter saturation voltage 0.4 v i c = 100a, e e = 5.0mw/cm 2 (3) i ceo collector-emitter dark current 100 na v ce = 5.0v, e e = 0 (4) v (br)ceo collector-emitter breakdown voltage v i c = 100a, e e = 0 v (br)eco emitter-collector breakdown voltage v i e = 100a, e e = 0 min 0.25 30 5 t r , t f rise and fall times 15 s i c = 1ma, r l = 1k ? 60% 40% 5.0 6.0 7.0 90% 100% 110% 120% 130% 80% 70% 140% 8.0 20% normalized at e e = 5mw/cm 2 conditions: v ce = 5v, = 935nm, t a = 25 c normalized at t a = 25 c . conditions: v ce = 5v, = 935nm, t a = 25 c
900 1100 1000 0% 20% 40% 60% 80% 100% relative response wavelength (nm) relative response vs. wavelength 800 700 600 500 400 OP520 op521 smd silicon phototransistor OP520, op521 i c(on) - on-state collector current (ma) collector-emitter dark current vs. temperature -25 0 25 temperature?( c) collector-emitter dark current (na) 10 1000 relative on-state collector current vs. collector-emitter voltage 0 0.1 0.2 0.3 0.4 0.5 collector-emitter voltage (v) 1 50 75 0.40 0.60 0.80 1.00 1.20 0.20 1.40 100 0 6 mw/cm 2 5 mw/cm 2 4 mw/cm 2 3 mw/cm 2 2 mw/cm 2 1 mw/cm 2 30 60 0% 20% 40% 60% 80% 100% relative response angular position (degrees) relative response vs. angular position 0 -30 -60 -90 90 100 conditions: e e = 0 mw/cm 2 v ce = 10v
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